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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616
FOUR DIGIT LED DISPLAY (0.4 Inch)
LFD4E5/62-XX/SRP128
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LFD4E5/62-XX/SRP128 A
: 26 - Nov - 2004
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 1/7
Package Dimensions
39.2(1.543")
UC
10.3(0.406")
DIG.1 10.16 (0.4")
DIG.2
DP2
DIG.3
DIG.4 12.9 (0.508")
r 1.4(0.055")
9.5 12.8O 0.5
2.54X12=30.48 (1.2") PIN NO.1
A FG E B C D DP
LFD4E5/62-XX/SRP128 LIGITEK
6.4 (0.252")
Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 2/7
Internal Circuit Diagram
LFD4E52-XX/SRP128
11 7 4 2 1 10 5
A B C D E F G
LFD4E62-XX/SRP128
11 7 4
A B C D E F G
DIG. 1
DIG. 1
12
2 1
10
12
5
2
3 13
A B DIG. C D E F G DP2
9
UC
3 13
A B DIG. C D E F G DP2 UC
2
9
A B C D E F G
DIG. 3
8
A B C D E F G
DIG. 3
8
A B C D E F G
DIG. 4
6
A B C D E F G
DIG. 4
6
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 3/7
Electrical Connection
PIN NO.1 1 2 3 4 5 6 7 8 9 10 11 12 13
LFD4E52-XX/SRP128
Anode E Anode D
Anode DP2
PIN NO.1 1 2 3 4 5 6 7 8 9 10 11 12 13
LFD4E62-XX/SRP128
Cathode E Cathode D Cathode DP2 Cathode C Cathode G Common Anode Dig.4 Cathode B Common Anode Dig.3 Common Anode Dig.2,DP2,UC Cathode F Cathode A Common Anode Dig.1 Anode UC
Anode C Anode G
Common Cathode Dig.4
Anode B
Common Cathode Dig.3 Common Cathode Dig.2,DP2,UG
Anode F Anode A
Common Cathode Dig.1 Cathode UC
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 4/7
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol G Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF 30 120 mA UNIT
IFP
mA
PD Ir Topr Tstg
100 10 -25 ~ +85 -25 ~ +85
mW
g A J J
Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 J
Part Selection And Application Information(Ratings at 25J )
Electrical
PART NO
common cathode Material Emitted or anode
CHIP Common Anode
GaP Green
f P (nm)
f
(nm)
Min.
Vf(v)
Iv(mcd) Typ.
IV-M
Typ. Max. Min.
LFD4E52-XX/SRP128
565 Common Cathode
30
1.7
2.1
2.6
0.8
1.75
2:1
LFD4E62-XX/SRP128
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 5/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
f P f
Ir IV-M
g A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 6/7
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.5
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
10 1.0
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25J
1.2
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LFD4E5/62-XX/SRP128 Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65JO 5J 2.RH=90 %~95 % 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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